MOCVD growth of InGaN multiple quantum well LEDs and laser diodes

被引：0

作者：

Mack, MP ^{[1
]}

Abare, AC ^{[1
]}

Kozodoy, P ^{[1
]}

Hanson, M ^{[1
]}

Keller, S ^{[1
]}

Mishra, UK ^{[1
]}

Coldren, LA ^{[1
]}

DenBaars, SP ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS | 1998年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The MOCVD growth of InGaN/GaN multiple quantum well (MQW) structures for blue LEDs and lasers has been investigated. (1) The structural and optical properties of the layers have been characterized by x-ray diffraction and photoluminescence. (2) By incorporating an MQW structure as the active region in a GaN p-n diode, high-brightness light emitting diodes (LEDs) have been produced. Under a forward current of 20 mA, these devices emit 2.2 mW of power corresponding to an external quantum efficiency of 4.5%. (3) Room temperature (RT) pulsed operation of blue (420 nm) nitride based multi-quantum well (MQW) laser diodes grown on c-plane sapphire substrates with threshold current densities as low as 19 kA/cm2 were observed for 5x800 mu m(2) lasers with uncoated reactive ion etched (RIE) facets.

引用

页码：367 / 370

页数：4

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