MOCVD growth of InGaN multiple quantum well LEDs and laser diodes

被引：0
|
作者：
Mack, MP [1 ]
Abare, AC [1 ]
Kozodoy, P [1 ]
Hanson, M [1 ]
Keller, S [1 ]
Mishra, UK [1 ]
Coldren, LA [1 ]
DenBaars, SP [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
来源：
1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS | 1998年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The MOCVD growth of InGaN/GaN multiple quantum well (MQW) structures for blue LEDs and lasers has been investigated. (1) The structural and optical properties of the layers have been characterized by x-ray diffraction and photoluminescence. (2) By incorporating an MQW structure as the active region in a GaN p-n diode, high-brightness light emitting diodes (LEDs) have been produced. Under a forward current of 20 mA, these devices emit 2.2 mW of power corresponding to an external quantum efficiency of 4.5%. (3) Room temperature (RT) pulsed operation of blue (420 nm) nitride based multi-quantum well (MQW) laser diodes grown on c-plane sapphire substrates with threshold current densities as low as 19 kA/cm2 were observed for 5x800 mu m(2) lasers with uncoated reactive ion etched (RIE) facets.
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页码：367 / 370
页数：4
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