Oxygen vacancy induced electrical conductivity enhancement in Ca-doped BiFeO3 thin films

被引：0

作者：

Zhang, Tong ^{[1
]}

Zhao, Wenhai ^{[1
]}

Wu, Qiqian ^{[1
]}

Yin, Cong ^{[1
]}

Zhao, Mi ^{[1
]}

Li, Zhidong ^{[1
]}

Wu, Liang ^{[1
]}

Zhang, Hui ^{[1
]}

Yang, Sheng'an ^{[1
]}

Chen, Qingming ^{[1
,2
]}

Yi, Jianhong ^{[1
,2
]}

Ma, Ji ^{[1
,2
]}

机构：

[1] Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Yunnan, Kunming,650093, China

[2] Southwest United Graduate School, Yunnan, Kunming,650500, China

来源：

Journal of Alloys and Compounds | 2024年 / 1008卷

基金：

中国国家自然科学基金;

关键词：

Bismuth ferrite; recognized for its exceptional physical properties as a multiferroic material; has recently attracted considerable attention due to its high domain wall conduction. However; challenges in further improving domain wall conductivity and magnetoelectric coupling hamper the practical application of pure-phase BFO thin films. Addressing these limitations; we successfully synthesized Bi1-xCaxFeO3 thin films on LaAlO₃ (001) substrates with varied calcium (Ca) doping levels (x = 0–0.3) through pulsed laser deposition. Our experimental data demonstrate a direct relationship between the films' electrical conductivity and the prevalence of oxygen vacancies (OV). An upward trend in both OV density and electrical conductivity emerges with incremental Ca doping; peaking at x = 0.2. Beyond this doping threshold; a further increase in Ca concentration inversely affects OV density and electrical conductivity. These insights suggest that fine-tuning OV concentration in Ca-doped BFO thin films can significantly modulate their electrical properties; paving the way for the advancement of bismuth ferrite-based electronic devices. © 2024 Elsevier B.V;

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摘要：

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引用

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