Preparation and characterization of CeO2/YSZ/CeO2 buffer layers for YBCO coated conductors

CeO2 seed layer was deposited on rolling-assisted biaxially textured metal substrates by direct-current (DC) magnetron reactive sputtering. The effect of deposition temperature on epitaxial orientation of CeO2 thin films was examined. High quality CeO2 layers were achieved at deposition temperature from 750°C to 850°C. Subsequently yttria-stabilized zirconia (YSZ) and CeO2 films were deposited to complete the buffer layer structure via the same process. The best samples exhibited a highly biaxial texture, as indicated by FWHM (full width half maximum) values in the range of 4°-5°, and 2°-4° for in-plane and out-of-plane orientations, respectively. Secondary ion mass spectrometer analysis confirmed the effective prevention of buffer layer against Ni and W metal interdiffusion. Atomic force microscope observations revealed a smooth, dense and crack-free surface morphology, which provided themselves as the good buffer structure to the YBa2Cu3O7-δ (YBCO) coated conductors.