Phase manipulation between c(4 × 2) and p(2 × 2) on the Si(100) surface at 4.2 K

被引：0

作者：

Sagisaka, Keisuke ^{[1
]}

Fujita, Daisuke ^{[1
]}

Kido, Giyuu ^{[1
]}

机构：

[1] Nanomaterials Laboratory, National Inst. of Mat. Sci., 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan

来源：

Physical Review Letters | 2003年 / 91卷 / 14期

关键词：

Atomic force microscopy - Buckling - Dimers - Low energy electron diffraction - Molecular dynamics - Phase transitions - Scanning tunneling microscopy - Surface structure - Ultrahigh vacuum - Voltage control;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Phase manipulation between c(4X2) and p(2X2) was demonstrated using sample bias voltage on LT-STM. Results suggest that c(4X2) is more stable than p(2X2) and the appearance of the p(2X2) domain is related to the effect of energetic tunneling electrons.

引用

页码：1 / 146103

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