Phase manipulation between c(4 × 2) and p(2 × 2) on the Si(100) surface at 4.2 K

被引：0
|
作者：
Sagisaka, Keisuke [1 ]
Fujita, Daisuke [1 ]
Kido, Giyuu [1 ]
机构：
[1] Nanomaterials Laboratory, National Inst. of Mat. Sci., 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
来源：
Physical Review Letters | 2003年 / 91卷 / 14期
关键词：
Atomic force microscopy - Buckling - Dimers - Low energy electron diffraction - Molecular dynamics - Phase transitions - Scanning tunneling microscopy - Surface structure - Ultrahigh vacuum - Voltage control;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Phase manipulation between c(4X2) and p(2X2) was demonstrated using sample bias voltage on LT-STM. Results suggest that c(4X2) is more stable than p(2X2) and the appearance of the p(2X2) domain is related to the effect of energetic tunneling electrons.
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页码：1 / 146103
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