Phase manipulation between c(4x2) and p(2x2) on the Si(100) surface at 4.2 K -: art. no. 146103

被引：75
|
作者：
Sagisaka, K [1 ]
Fujita, D [1 ]
Kido, G [1 ]
机构：
[1] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 3050047, Japan
来源：
PHYSICAL REVIEW LETTERS | 2003年 / 91卷 / 14期
关键词：
D O I：
10.1103/PhysRevLett.91.146103
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Phase manipulation between c(4x2) and p(2x2) on the Si(100) surface has been demonstrated at 4.2 K for the first time using a low-temperature scanning tunneling microscope. We have discovered that it is possible to change the c(4x2) surface into the p(2x2) surface, artificially, through a flip-flop motion of the buckling dimers by using a sample bias voltage control. Also, scanning at a negative bias voltage or applying a pulse voltage can restore the c(4x2) surface. The STM images as a function of bias voltage and tunneling current reveal the interesting dynamics of the buckling dimers on the long debated surface. Our results will show that energetic tunneling electrons are most likely responsible for the observed phase transition from c(4x2) to p(2x2).
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页数：4
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