A Scanning Tunneling Spectroscopy Study on TCNQ/n-Si and/p-Si

被引：0
|
作者：
Lee, Haeseong [1 ]
Lee, Namhyung [1 ]
Lee, Haiwon [1 ]
Bae, Sung Soo [2 ]
Kim, Sehun [2 ]
机构：
[1] Department of Chemistry, Hanyang University, Seoul,133-791, Korea, Republic of
[2] Department of Chemistry, KAIST, Taejeon,305-701, Korea, Republic of
来源：
Molecular Crystals and Liquid Crystals | 2002年 / 377卷 / 01期
关键词：
Film thickness - Silicon compounds;
D O I：
10.1080/713738551
中图分类号：
学科分类号：
摘要：
A thin film (thickness: 1.5 nm) of tetracyanoquinodimethane (TCNQ), a well-known electron acceptor, was fabricated on p-Si and n-Si using a spin casting method. The junction properties of these systems were investigated using scanning tunneling spectroscopy (STS). I/V curves of the two systems showed rectifying properties with different polarity. It can provide a new technology to fabricate molecular-level rectifier if nanolithography is accomplished on these systems. © 2002, Copyright Taylor & Francis Group, LLC.
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页码：25 / 28
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