780 nm high power laser diodes (260 mW) for CD-R/RW

被引：0
|
作者：
Yamamoto, Saburou
Toyoshi, Hideyuki
Ito, Shin
机构：
来源：
Shapu Giho/Sharp Technical Journal | 2002年 / 84期
关键词：
High power lasers - Mirrors - Molecular beam epitaxy - Semiconducting aluminum compounds;
D O I：
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学科分类号：
摘要：
We have developed high power laser diodes for 48 times high speed CD-R/RW. AlGaAs Quantum-Well layers were grown by MBE(Molecular Beam Epitaxy) method. Window-structure has been developed utilizing QWl(Quantum Well Intermixing). Window region prevents mirror surfaces from optical damage. MBE method uses Be as p-type dopant. The diffusion of Be is little during the thermal process. As a result, no degradation is obtained for more than 2000 hours under 260 mW pulse operation with 50 ns width, 50% duty at 75°C. Ith((theshold current)=30 mA,η(slope efficient)= 0.97, To(temperature coefficient of Ith)=130 K, and COD(catastrohpic optical damage) power>300 mW are obtained.
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页码：45 / 49
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