780 nm high power laser diodes (260 mW) for CD-R/RW

We have developed high power laser diodes for 48 times high speed CD-R/RW. AlGaAs Quantum-Well layers were grown by MBE(Molecular Beam Epitaxy) method. Window-structure has been developed utilizing QWl(Quantum Well Intermixing). Window region prevents mirror surfaces from optical damage. MBE method uses Be as p-type dopant. The diffusion of Be is little during the thermal process. As a result, no degradation is obtained for more than 2000 hours under 260 mW pulse operation with 50 ns width, 50% duty at 75°C. Ith((theshold current)=30 mA,η(slope efficient)= 0.97, To(temperature coefficient of Ith)=130 K, and COD(catastrohpic optical damage) power>300 mW are obtained.