The performance enhancement of an InGaN/GaN multiple-quantum-well solar cell by superlattice structure

被引：0
|
作者：
School of Microelectronics, Xidian University, Xi'an [1 ]
710071, China
不详 [2 ]
710065, China
不详 [3 ]
710127, China
机构：
来源：
Jpn. J. Appl. Phys. | / 11卷
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Strain - Semiconductor quantum wells - Solar cells - III-V semiconductors - Electron tunneling
引用
收藏
相关论文
共 50 条
  • [31] Modelling and Performance analysis of InGaN/GaN based Multiple Quantum Well solar cells
    Siddharth, Gaurav
    Singh, Ruchi
    Mukherjee, Shaibal
    2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2020, : 98 - 100
  • [32] Crystal orientation dependence of optical gain in InGaN/GaN multiple-quantum-well structures
    Chen, CC
    Hsieh, KL
    Sheu, JK
    Chi, GC
    Jou, MJ
    Lee, CH
    Lin, MZ
    APPLIED PHYSICS LETTERS, 2001, 79 (10) : 1477 - 1479
  • [33] Electrical characterization of InGaN/GaN multiple-quantum-well structures by thermal admittance spectroscopy
    Nguyen, ND
    Schmeits, M
    Germain, M
    Schineller, B
    Heuken, M
    INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, 2002, : 288 - 292
  • [34] A study of the inclusion of prelayers in InGaN/GaN single- and multiple-quantum-well structures
    Davies, Matthew J.
    Dawson, Philip
    Massabuau, Fabien C. -P.
    Le Fol, Adrian
    Oliver, Rachel A.
    Kappers, Menno J.
    Humphreys, Colin J.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2015, 252 (05): : 866 - 872
  • [35] Simulation study of InGaN/GaN multiple quantum well solar cells
    Sayad, Yassine
    Nonni, AbdelKader
    JOURNAL OF NEW TECHNOLOGY AND MATERIALS, 2014, 4 (01) : 9 - 10
  • [36] Temperature Dependence of InGaN / GaN Multiple Quantum Well Solar Cells
    Belghouthi, Rabeb
    Aillerie, Michel
    TECHNOLOGIES AND MATERIALS FOR RENEWABLE ENERGY, ENVIRONMENT AND SUSTAINABILITY (TMREES), 2019, 157 : 793 - 801
  • [37] Conversion Efficiency Improvement of InGaN/GaN Multiple-Quantum-Well Solar Cells With Ex Situ AlN Nucleation Layer
    Yu, Chun-Ta
    Lai, Wei-Chih
    Yen, Cheng-Hsiung
    Chang, Ching-Wen
    Tu, Li-Wei
    Chang, Shoou-Jinn
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (05) : 1473 - 1477
  • [38] Transport modeling of InGaN/GaN multiple quantum well solar cells
    Cavassilas, Nicolas
    Michelini, Fabienne
    Bescond, Marc
    2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2014, : 2875 - 2877
  • [39] Investigation of Efficiency Droop Behaviors of InGaN/GaN Multiple-Quantum-Well LEDs With Various Well Thicknesses
    Li, Yun-Li
    Huang, Yi-Ru
    Lai, Yu-Hung
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2009, 15 (04) : 1128 - 1131
  • [40] Efficiency enhancement for resonant-cavity-enhanced InGaN/GaN multiple quantum well solar cells
    Zheng, Z. W.
    Yu, J.
    Lai, M. H.
    Ying, L. Y.
    Zhang, B. P.
    VACUUM, 2017, 140 : 76 - 81
12345