The performance enhancement of an InGaN/GaN multiple-quantum-well solar cell by superlattice structure

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作者：
School of Microelectronics, Xidian University, Xi'an [1 ]
710071, China
不详 [2 ]
710065, China
不详 [3 ]
710127, China
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来源：
Jpn. J. Appl. Phys. | / 11卷
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摘要：
Strain - Semiconductor quantum wells - Solar cells - III-V semiconductors - Electron tunneling
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