High-quality SiO2/Si interface formation and its application to fabrication of low-temperature-processed polycrystalline Si thin-film transistor

被引：0

作者：

Higashi, Seiichiro ^{[1
]}

Abe, Daisuke ^{[1
]}

Hiroshima, Yasushi ^{[1
]}

Miyashita, Kazuyuki ^{[1
]}

Kawamura, Takahiro ^{[1
]}

Inoue, Satoshi ^{[1
]}

Shimoda, Tatsuya ^{[1
]}

机构：

[1] Seiko Epson Corporation, Technology Platform Research Center, 3-3-5 Owa, Suwa, Nagano 392-8502, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002年 / 41卷 / 6 A期

关键词：

D O I：

10.1143/jjap.41.3646

中图分类号：

学科分类号：

摘要：

引用

页码：3646 / 3650

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