High-quality SiO2/Si interface formation and its application to fabrication of low-temperature-processed polycrystalline Si thin-film transistor

被引：0
|
作者：
Higashi, Seiichiro [1 ]
Abe, Daisuke [1 ]
Hiroshima, Yasushi [1 ]
Miyashita, Kazuyuki [1 ]
Kawamura, Takahiro [1 ]
Inoue, Satoshi [1 ]
Shimoda, Tatsuya [1 ]
机构：
[1] Seiko Epson Corporation, Technology Platform Research Center, 3-3-5 Owa, Suwa, Nagano 392-8502, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002年 / 41卷 / 6 A期
关键词：
D O I：
10.1143/jjap.41.3646
中图分类号：
学科分类号：
摘要：
26
引用
收藏
页码：3646 / 3650
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