Structural stability of (Ba, Sr)RuO3 electrodes on hydrogen annealing and effect of interfacial layers in (Ba,Sr)TiO3 thin films

被引：0

作者：

Choi, Eun-Suck ^{[1
]}

Park, Sang-Shik ^{[2
]}

Yoon, Soon-Gil ^{[1
]}

机构：

[1] Department of Materials Engineering, Chungnam National University, Daedeok Science Town, Daejeon, 305-764, Korea, Republic of

[2] Department of Advanced Materials Engineering, Sangju National University, Kyungbuk, 742-711, Korea, Republic of

来源：

Integrated Ferroelectrics | 2002年 / 47卷

关键词：

Annealing - Barium compounds - Ferroelectric thin films - Metallorganic chemical vapor deposition - Permittivity;

D O I：

10.1080/713718271

中图分类号：

学科分类号：

摘要：

(Ba, Sr)RuO3(BSR) electrodes were deposited on n-type Si (100) substrates by liquid-delivery metalorganic chemical vapor deposition (LDMOCVD) and their stability in a hydrogen ambient was investigated. BSR films showed the structural and morphological stability when annealed in hydrogen forming gas (4 % H2+96% balance N2) temperatures of up to 500. The abrupt increase of resistivity with increasing hydrogen annealing temperature can be attributed to oxygen loss in BSR films without phase change and was completely recovered by annealing at 700 in an O2 ambient. The dielectric constant of the Pt/BSR/BST/Pt structures increased with increasing BSR interfacial layers. The dielectric constant of a BSR/BST/Pt capacitor with a 35 nm thick BST without top Pt electrode showed about 425. © 2002 Taylor & Francis.

引用

页码：31 / 40

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