Growth of boron nitride on 6H-SiC substrate by flow-rate modulation epitaxy

被引：0
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作者：
Kobayashi, Yasuyuki [1 ]
Makimoto, Toshiki [1 ]
机构：
[1] NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 4 B期
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摘要：
Journal article (JA)
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页码：3519 / 3521
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