Effects of H2 addition in magnetized inductively coupled C2F6 plasma etching of silica aerogel film

被引:0
|
作者
Wang, Seok-Joo [1 ]
Park, Hyung-Ho [1 ]
Yeom, Geun-Young [1 ]
机构
[1] Yonsei Univ, Seoul, Korea, Republic of
来源
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 2000年 / 39卷 / 12期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
9
引用
收藏
页码:7007 / 7010
相关论文
共 50 条
  • [41] Inductively coupled plasma etching of Pb(ZrxTi1-x)O3 thin films in Cl2/C2F6/Ar and HBr/Ar plasmas
    Chung, CW
    Byun, YH
    Kim, HI
    KOREAN JOURNAL OF CHEMICAL ENGINEERING, 2002, 19 (03) : 524 - 528
  • [42] THE EFFECTS OF POLYMER FILM FORMATION ON PHOTORESIST (OFPR-800) DURING PLASMA-ETCHING IN C2F6/CHF3/HE
    THOMAS, JH
    WHITE, LK
    MISZKOWSKI, N
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03): : 1706 - 1711
  • [43] Impact of Ar addition to inductively coupled plasma etching of SiC in SF6/O2
    Jiang, LD
    Cheung, R
    MICROELECTRONIC ENGINEERING, 2004, 73-4 : 306 - 311
  • [44] Inductively coupled plasma etching of In-based compound semiconductors in CH4/H2/Ar
    Diniz, JA
    Swart, JW
    Jung, KB
    Hong, J
    Pearton, SJ
    SOLID-STATE ELECTRONICS, 1998, 42 (11) : 1947 - 1951
  • [45] Electron and negative ion densities in C2F6 and CHF3 containing inductively coupled discharges
    Hebner, GA
    Miller, PA
    JOURNAL OF APPLIED PHYSICS, 2000, 87 (11) : 7660 - 7666
  • [46] Selective SiO2/Si3N4 etching in magnetized inductively coupled C4F8 plasma
    Lee, HJ
    Kim, JK
    Kim, JH
    Whang, KW
    Kim, JH
    Joo, JH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (02): : 500 - 506
  • [47] Light emission from a-Si:C:O:H films fabricated by C2F6 and O2/C2F6 plasma treating silicone oil liquid
    Chen, Tian
    Ye, Chao
    Deng, Yanhong
    Yuan, Ying
    Ge, Shuibin
    Xu, Yijun
    Ning, Zhaoyuan
    Pan, Xiaopin
    Wang, Zhenmin
    JOURNAL OF LUMINESCENCE, 2012, 132 (09) : 2416 - 2420
  • [48] Comparison of inductively coupled plasma Cl2 and Cl4/H2 etching of III-nitrides
    Cho, H
    Vartuli, CB
    Donovan, SM
    Abernathy, CR
    Pearton, SJ
    Shul, RJ
    Constantine, C
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (03): : 1631 - 1635
  • [49] Characterization of H2O-inductively coupled plasma for dry etching
    Matsutani, A.
    Ohtsuki, H.
    Koyama, F.
    PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 2008, 100
  • [50] Abatement of C2F6 in rf and microwave plasma reactors
    Vitale, SA
    Sawin, HH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (05): : 2217 - 2223