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- [31] Inductively coupled plasma etching of InP using CH4/H2 and CH4/H2/N2 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (01): : 47 - 52
- [32] Investigation of InP etching mechanisms in a Cl2/H2 inductively coupled plasma by optical emission spectroscopy JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2009, 27 (02): : 262 - 275
- [33] Comparison of inductively coupled plasma Cl2 and Cl 4/H2 etching of III-nitrides Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 1998, 16 (03): : 1631 - 1635
- [35] Reactor to feature scale simulation studies of SiO2 etching in C2F6 plasma for microfabrication PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007, 2007, : 293 - 296
- [37] Measurement of fluorocarbon radicals generated from C4F8/H2 inductively coupled plasma: study on SiO2 selective etching kinetics Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1995, 34 (4 B): : 2119 - 2124
- [39] Inductively coupled plasma etching of Pb(ZrxTi 1-x)O3 thin films in Cl2/C2F6/Ar and HBr/Ar plasmas THIN FILM MATERIALS, PROCESSES, AND RELIABILITY, 2001, 2001 (24): : 63 - 68
- [40] Inductively coupled plasma etching of Pb(ZrxTi1-x)O3 thin films in Cl2/C2F6/Ar and HBr/Ar plasmas Korean Journal of Chemical Engineering, 2002, 19 : 524 - 528