Characterization of threading edge dislocation in 4H-SiC by X-ray topography and transmission electron microscopy

被引：0
|
作者：
20141217488073
机构：
来源：
(1) Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8587, Japan; (2) Toyota Motor Corporation, 1200 Mishuku, Susono, Shizuoka 410-1193, Japan; (3) Toyota Central Research and Development Laboratories Incorporated, Nagakute, Aichi 480-1192, Japan; (4) The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan | 1600年 / Cree Inc.; et al; Mitsubishi Electric Corporation; Research Institute for Applied Sciences; The Japan Society of Applied Physics; Tokyo Electron Limited卷 / Trans Tech Publications Ltd期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
103223
引用
收藏
页码：778 / 780
相关论文
共 50 条
  • [41] X-ray and electron response of 4H-SiC vertical interdigitated Schottky photodiodes
    Lees, J. E.
    Barnett, A. M.
    Bassford, D. J.
    Mazzillo, M.
    JOURNAL OF INSTRUMENTATION, 2012, 7
  • [42] 3D structure of threading screw dislocation at a deep location in 4H-SiC using 3D micro-X-ray topography
    Ishiji, Kotaro
    Yoneyama, Akio
    Inaba, Masayuki
    Fukuda, Kazunori
    Sakaki, Atsushi
    Ohmagari, Shinya
    Sugie, Ryuichi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2024, 63 (02)
  • [43] Electrical characterization of 4H-SiC avalanche photodiodes containing threading edge and screw dislocations
    Berechman, R. A.
    Skowronski, M.
    Soloviev, S.
    Sandvik, P.
    JOURNAL OF APPLIED PHYSICS, 2010, 107 (11)
  • [44] Analysis of strain in ion implanted 4H-SiC by fringes observed in synchrotron X-ray topography
    Chen, Zeyu
    Liu, Yafei
    Cheng, Qianyu
    Hu, Shanshan
    Raghothamachar, Balaji
    Dudley, Michael
    JOURNAL OF CRYSTAL GROWTH, 2024, 627
  • [45] Analysis of Strain in Ion Implanted 4H-SiC by Fringes Observed in Synchrotron X-Ray Topography
    Chen Z.
    Liu Y.
    Peng H.
    Cheng Q.
    Hu S.
    Raghothamachar B.
    Dudley M.
    Ghandi R.
    Kennerly S.
    Thieberger P.
    Defect and Diffusion Forum, 2023, 426 : 51 - 56
  • [46] Structural characterization of the grown crystal/seed interface of physical vapor transport grown 4H-SiC crystals using Raman microscopy and x-ray topography
    Shioura, Kentaro
    Shinagawa, Naoto
    Izawa, Takuto
    Ohtani, Noboru
    JOURNAL OF CRYSTAL GROWTH, 2019, 515 : 58 - 65
  • [47] Structural characterization of the growth front of physical vapor transport grown 4H-SiC crystals using X-ray topography
    Sonoda, Masashi
    Nakano, Takahiro
    Shioura, Kentaro
    Shinagawa, Naoto
    Ohtani, Noboru
    JOURNAL OF CRYSTAL GROWTH, 2018, 499 : 24 - 29
  • [48] Direct observation of basal-plane to threading-edge dislocation conversion in 4H-SiC epitaxy
    Chung, Suk
    Wheeler, Virginia
    Myers-Ward, Rachael
    Eddy, Charles R., Jr.
    Gaskill, D. Kurt
    Wu, Ping
    Picard, Yoosuf N.
    Skowronski, Marek
    JOURNAL OF APPLIED PHYSICS, 2011, 109 (09)
  • [49] Relationship between threading dislocation and leakage current in 4H-SiC diodes
    Fujiwara, Hirokazu
    Naruoka, Hideki
    Konishi, Masaki
    Hamada, Kimimori
    Katsuno, Takashi
    Ishikawa, Tsuyoshi
    Watanabe, Yukihiko
    Endo, Takeshi
    APPLIED PHYSICS LETTERS, 2012, 100 (24)
  • [50] Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth Using Synchrotron X-Ray Topography
    Cheng, Qianyu
    Liu, Yafei
    Chen, Zeyu
    Hu, Shanshan
    Raghothamachar, Balaji
    Dudley, Michael
    Pushkarev, Vladimir
    Moeggenborg, Kevin
    Hung, Gil C.
    Sanchez, Edward
    Soukhojak, Andrey
    Defect and Diffusion Forum, 2024, 434 : 71 - 80
12345