Characterization of threading edge dislocation in 4H-SiC by X-ray topography and transmission electron microscopy

被引：0
|
作者：
20141217488073
机构：
来源：
(1) Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8587, Japan; (2) Toyota Motor Corporation, 1200 Mishuku, Susono, Shizuoka 410-1193, Japan; (3) Toyota Central Research and Development Laboratories Incorporated, Nagakute, Aichi 480-1192, Japan; (4) The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan | 1600年 / Cree Inc.; et al; Mitsubishi Electric Corporation; Research Institute for Applied Sciences; The Japan Society of Applied Physics; Tokyo Electron Limited卷 / Trans Tech Publications Ltd期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
103223
引用
收藏
页码：778 / 780
相关论文
共 50 条
  • [21] High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayersa
    Kamata, I.
    Nagano, M.
    Tsuchida, H.
    Chen, Yi
    Dudley, M.
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 305 - +
  • [22] High-resolution x-ray topography of dislocations in 4H-SiC epilayers
    Kamata I.
    Tsuchida H.
    Vetter W.M.
    Dudley M.
    Journal of Materials Research, 2007, 22 (4) : 845 - 849
  • [23] High-resolution x-ray topography of dislocations in 4H-SiC epilayers
    Kamata, Isaho
    Tsuchida, Hidekazu
    Vetter, William M.
    Dudley, Michael
    JOURNAL OF MATERIALS RESEARCH, 2007, 22 (04) : 845 - 849
  • [24] High-resolution X-ray topography of dislocations in 4H-SiC epilayers
    Kamata, Isaho
    Tsuchida, Hidekazu
    Vetter, William M.
    Dudley, Michael
    Silicon Carbide 2006 - Materials, Processing and Devices, 2006, 911 : 175 - 180
  • [25] Threading dislocations in n- and p-type 4H-SiC material analyzed by etching and synchrotron X-ray topography
    Kallinger, B.
    Polster, S.
    Berwian, P.
    Friedrich, J.
    Mueller, G.
    Danilewsky, A. N.
    Wehrhahn, A.
    Weber, A. -D.
    JOURNAL OF CRYSTAL GROWTH, 2011, 314 (01) : 21 - 29
  • [26] Analysis of the inclined structure of threading screw dislocation in SiC using deep X-ray topography
    Ishiji, Kotaro
    Yoneyama, Akio
    Kamata, Isaho
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2024, 63 (12):
  • [27] High-resolution X-ray topography of threading edge dislocations in 4H-SiC using a novel nuclear emulsion film improved special resolution and sensitivity
    Yamaguchi, Satoshi
    Naganawa, Naotaka
    Nakamura, Mitsuhiro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (06)
  • [28] Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals
    Ailihumaer, Tuerxun
    Peng, Hongyu
    Liu, Yafei
    Raghothamachar, Balaji
    Dudley, Michael
    Chung, Gilyong
    Manning, Ian
    Sanchez, Edward
    JOURNAL OF ELECTRONIC MATERIALS, 2021, 50 (06) : 3258 - 3265
  • [29] Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals
    Tuerxun Ailihumaer
    Hongyu Peng
    Yafei Liu
    Balaji Raghothamachar
    Michael Dudley
    Gilyong Chung
    Ian Manning
    Edward Sanchez
    Journal of Electronic Materials, 2021, 50 : 3258 - 3265
  • [30] Origin Analyses of Obtuse Triangular Defects in 4deg.-off 4H-SiC Epitaxial Wafers by Electron Microscopy and by Synchrotron X-ray Topography
    Yamashita, T.
    Matsuhata, H.
    Miyasaka, Y.
    Ohshima, H.
    Sekine, M.
    Momose, K.
    Sato, T.
    Kitabatake, M.
    SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 649 - +
12345