Characterization of threading edge dislocation in 4H-SiC by X-ray topography and transmission electron microscopy

被引:0
|
作者
20141217488073
机构
关键词
D O I
暂无
中图分类号
学科分类号
摘要
103223
引用
收藏
页码:778 / 780
相关论文
共 50 条
  • [1] Characterization of Threading Edge Dislocation in 4H-SiC by X-ray Topography and Transmission Electron Microscopy
    Sugawara, Yoshihiro
    Yao, Yong-Zhao
    Ishikawa, Yukari
    Danno, Katsunori
    Suzuki, Hiroshi
    Bessho, Takeshi
    Yamaguchi, Satoshi
    Nishikawa, Koichi
    Ikuhara, Yuichi
    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 366 - +
  • [2] Study of dislocation mobility in 4H SiC by X-Ray transmission topography, chemical etching and transmission electron microscopy
    Idrissi, H
    Lancin, M
    Regula, G
    Pichaud, B
    SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, 457-460 : 355 - 358
  • [3] Characterization of triangular-defects in 4°off 4H-SiC epitaxial wafers by synchrotron X-ray topography and by transmission electron microscopy
    Yamashita, T.
    Momose, K.
    Muto, D.
    Shimodaira, Y.
    Yamatake, K.
    Miyasaka, Y.
    Sato, T.
    Matsuhata, H.
    Kitabatake, M.
    SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 363 - 366
  • [4] Analysis of dislocation structures in 4H-SiC by synchrotron X-ray topography
    Advanced Industrial Science and Technology, Advanced Power Electronics Research Center, 1-1-1, Umezono, Tsukuba
    305-8568, Japan
    不详
    305-0044, Japan
    不详
    293-8511, Japan
    不详
    185-8601, Japan
    不详
    212-8582, Japan
    IEEJ Trans. Fundam. Mater., 12 (768-779):
  • [5] Analysis of Dislocation Structures in 4H-SiC by Synchrotron X-Ray Topography
    Matsuhata, Hirohumi
    Yamaguchi, Hirotaka
    Sekiguchi, Takashi
    Chen, Bin
    Sasaki, Masayuki
    Ohno, Toshiyuki
    Suzuki, Takuma
    Hatakeyama, Tetsuo
    Tsuji, Takashi
    Yonezawa, Yoshiyuki
    Arai, Kazuo
    ELECTRICAL ENGINEERING IN JAPAN, 2016, 197 (03) : 3 - 17
  • [6] Transmission Electron Microscopy Analysis of a Threading Dislocation with c+a Burgers Vector in 4H-SiC
    Sugawara, Yoshihiro
    Nakamori, Michio
    Yao, Yong-Zhao
    Ishikawa, Yukari
    Danno, Katsunori
    Suzuki, Hiroshi
    Bessho, Takeshi
    Yamaguchi, Satoshi
    Nishikawa, Koichi
    Ikuhara, Yuichi
    APPLIED PHYSICS EXPRESS, 2012, 5 (08)
  • [7] Contrast of Basal Plane and Threading Edge Dislocations in 4H-SiC by X-ray Topography in Grazing Incidence Geometry
    Matsuhata, Hirofumi
    Yamaguchi, Hirotaka
    Nagai, Ichiro
    Ohno, Toshiyuki
    Kosugi, Ryouji
    Kinoshita, Akimasa
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 321 - +
  • [8] Threading dislocations in 4H-SiC observed by double-crystal X-ray topography
    Yamaguchi, Hirotaka
    Matsuhata, Hirofumi
    DEFECTS-RECOGNITION, IMAGING AND PHYSICS IN SEMICONDUCTORS XIV, 2012, 725 : 7 - 10
  • [9] Characterization of V-Shaped Defects Formed during the 4H-SiC Solution Growth by Transmission Electron Microscopy and X-ray Topography Analysis
    Xiao, Shiyu
    Harada, Shunta
    Murayama, Kenta
    Ujihara, Toni
    CRYSTAL GROWTH & DESIGN, 2016, 16 (09) : 5136 - 5140
  • [10] X-Ray Three-Dimensional Topography Imaging of Basal-Plane and Threading-Edge Dislocations in 4H-SiC
    Tanuma, R.
    Mori, D.
    Kamata, I.
    Tsuchida, H.
    SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 323 - +