共 50 条
- [1] Characterization of Threading Edge Dislocation in 4H-SiC by X-ray Topography and Transmission Electron Microscopy SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 366 - +
- [2] Study of dislocation mobility in 4H SiC by X-Ray transmission topography, chemical etching and transmission electron microscopy SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, 457-460 : 355 - 358
- [3] Characterization of triangular-defects in 4°off 4H-SiC epitaxial wafers by synchrotron X-ray topography and by transmission electron microscopy SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 363 - 366
- [4] Analysis of dislocation structures in 4H-SiC by synchrotron X-ray topography IEEJ Trans. Fundam. Mater., 12 (768-779):
- [7] Contrast of Basal Plane and Threading Edge Dislocations in 4H-SiC by X-ray Topography in Grazing Incidence Geometry SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 321 - +
- [8] Threading dislocations in 4H-SiC observed by double-crystal X-ray topography DEFECTS-RECOGNITION, IMAGING AND PHYSICS IN SEMICONDUCTORS XIV, 2012, 725 : 7 - 10
- [10] X-Ray Three-Dimensional Topography Imaging of Basal-Plane and Threading-Edge Dislocations in 4H-SiC SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 323 - +