Amorphous transparent conductive electrode films prepared by RF magnetron sputterng using H2O2 addition gas

Amorphous transparent conductive electrode films prepared by RF magnetron sputterng using H2O2 addition gas which introduced to the chamber as a vapour. The films were deposited for changing addition partial gas pressure of H2O2. As a result, These films had fine electrical properties similar to the films prepared with H2O, and more, stable for time passage. We also investigated wet etching properties. In spite of changing addition partial gas pressure, it has constant wet etching rate. We observed not only films surface with AFM (JSPM-4200, JEOL), but also structure with XRD (RINT1400, Rigaku). The flatness was so improved, the average of roughness Ra was 0.378 nm at 11 × 10-3 Pa of H 2O2 addition partial gas pressure. Still more, there were no change of electrical and optical properties for anneal (200 °C-1 h hold in vaccum).