Millimeter-wave photoresponse due to excitation of two-dimensional plasmons in InGaAs/InP high-electron-mobility transistors

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[1] [1,2,Nader Esfahani, N.
[2] Peale, R.E.
[3] 1,Buchwald, W.R.
[4] Fredricksen, C.J.
[5] Hendrickson, J.R.
[6] Cleary, J.W.
来源：
Nader Esfahani, N. (Nima.Nader.ctr@wpafb.af.mil) | 1600年 / American Institute of Physics Inc.卷 / 114期
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High electron mobility transistors;
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