Parabolic negative magnetoresistance in two-dimensional electron gas in InGaAs/InP

被引：0
|
作者：
Podoer, B. [1 ,2 ]
Remenyi, G. [3 ]
机构：
[1] Tech Univ Budapest, Kando Kalman Fac Elect Engn, Inst Microelect & Technol, H-1521 Budapest, Hungary
[2] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, Budapest, Hungary
[3] CNRS, Ctr Recherches surles Tres Basses Temp, Lab Champs Magnetiques Intense, Grenoble, France
来源：
2008 31ST INTERNATIONAL SPRING SEMINAR ON ELECTRONICS TECHNOLOGY: RELIABILITY AND LIFE-TIME PREDICTION | 2008年
关键词：
D O I：
10.1109/ISSE.2008.5276542
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have measured the magnetoresistance of two-dimensional electron gas in modulation-doped In0.53Ga0.47As/In heterostructures in the temperature range from 40 mK to 4.2 K. In magnetic fields less than about I T and before the onset of Shubnikov-de Haas oscillations a large negative magnetoresistance was observed, which followed a quadratic dependence on the magnetic field. The observed negative magnetoresistance can be explained in terms of electron-electron interaction in two-dimension.
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页码：195 / +
页数：3
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