Effective dopant activation in silicon film using excimer laser annealing for high-performance thin film transistors

被引：0
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作者：
Noguchi, Takashi [1 ]
机构：
[1] Electrical and Electronics Engineering, University of the Ryukyus, Nishihara, Okinawa 903-0213, Japan
来源：
Japanese Journal of Applied Physics | 2008年 / 47卷 / 3 PART 2期
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摘要：
Journal article (JA)
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页码：1858 / 1861
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