Effective dopant activation in silicon film using excimer laser annealing for high-performance thin film transistors

被引：0
|
作者：
Noguchi, Takashi [1 ]
机构：
[1] Electrical and Electronics Engineering, University of the Ryukyus, Nishihara, Okinawa 903-0213, Japan
来源：
Japanese Journal of Applied Physics | 2008年 / 47卷 / 3 PART 2期
关键词：
17;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
页码：1858 / 1861
相关论文
共 50 条
  • [31] Polycrystalline silicon thin film transistors fabricated by employing selective self ion-implantation and excimer laser annealing
    Lee, MC
    Jeon, JH
    Jung, SH
    Han, MK
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2000, 37 (06) : 870 - 872
  • [32] Drastic activation of dopant in Si film using ELA for high-performance TFT
    Noguchi, T.
    Kawai, K.
    Kakazu, J.
    Kinjo, E.
    Nakamura, R.
    Miyahira, T.
    Suzuki, T.
    Sato, M.
    IDW '07: PROCEEDINGS OF THE 14TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, 2007, : 1885 - +
  • [33] STIFFNESS TRIMMING OF HIGH Q MEMS RESONATORS BY EXCIMER LASER ANNEALING OF GERMANIUM THIN FILM ON SILICON
    Hamelin, Benoit
    Daruwalla, Anosh
    Ayazi, Farrokh
    2016 IEEE 29TH INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS), 2016, : 1026 - 1029
  • [34] Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing
    Fujii, Mami
    Ishikawa, Yasuaki
    Ishihara, Ryoichi
    van der Cingel, Johan
    Mofrad, Mohammad R. T.
    Horita, Masahiro
    Uraoka, Yukiharu
    APPLIED PHYSICS LETTERS, 2013, 102 (12)
  • [35] High-Performance Polycrystalline-Silicon Nanowire Thin-Film Transistors With Location-Controlled Grain Boundary via Excimer Laser Crystallization
    Wang, Chao-Lung
    Lee, I-Che
    Wu, Chun-Yu
    Chou, Chia-Hsin
    Yang, Po-Yu
    Cheng, Yu-Ting
    Cheng, Huang-Chung
    IEEE ELECTRON DEVICE LETTERS, 2012, 33 (11) : 1562 - 1564
  • [36] High-Performance Polycrystalline Silicon Thin-Film Transistors with Two-Dimensional Location Control of the Grain Boundary via Excimer Laser Crystallization
    Wang, Chao-Lung
    Lee, I-Che
    Wu, Chun-Yu
    Liao, Chan-Yu
    Cheng, Yu-Ting
    Cheng, Huang-Chung
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2012, 12 (07) : 5505 - 5509
  • [37] High-performance n-channel polycrystalline germanium thin-film transistors via continuous-wave laser crystallization and green nanosecond laser annealing for source and drain dopant activation
    Li, Yi-Shao
    Liang, Hao-Hsiang
    Wu, Chun-Yi
    Huang, Wen-Hsien
    Luo, Jun-Dao
    Chuang, Kai-Chi
    Li, Wei-Shuo
    Cheng, Huang-Chung
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (SD)
  • [38] Thermal simulation of excimer Laser fusion and recrystallization of amorphous silicon for thin film transistors
    deUnamuno, S
    Fogarassy, E
    ANNALES DE PHYSIQUE, 1997, 22 : 225 - 226
  • [39] HIGH-PERFORMANCE THIN-FILM TRANSISTORS FROM OPTIMIZED POLYCRYSTALLINE SILICON FILMS
    MEAKIN, DB
    COXON, PA
    MIGLIORATO, P
    STOEMENOS, J
    ECONOMOU, NA
    APPLIED PHYSICS LETTERS, 1987, 50 (26) : 1894 - 1896
  • [40] Improvement of InGaZnO4 Thin Film Transistors Characteristics Utilizing Excimer Laser Annealing
    Nakata, Mitsuru
    Takechi, Kazushige
    Azuma, Kazufumi
    Tokumitsu, Eisuke
    Yamaguchi, Hirotaka
    Kaneko, Setsuo
    APPLIED PHYSICS EXPRESS, 2009, 2 (02)
12345