Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes

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作者：
Vacas, J. [1 ,3 ]
Lahrèche, H. [2 ]
Monteiro, T. [3 ]
Caspar, C. [3 ]
Pereira, E. [3 ]
Brylinski, C. [1 ]
Di Forte-Poisson, M.A. [1 ]
机构：
[1] LCR Lab. Central de Rechereches, Thomson-CSF, Domaine de Corbeville, FR-91404 Orsay Cedex, France
[2] CRHEA, Ctr. Rech. sur l'Heteroepitaxie S., UPR No 10 du CNRS, FR-06560 Valbonne, France
[3] Departamento de Física, Universidade de Aveiro, PT-3810 Aveiro, Portugal
来源：
Materials Science Forum | 2000年 / 338卷
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