Study on MOVPE growth of 1.3 μm uncooled AlGaInAs/InP strain-compensated quantum well lasers

被引：0
|
作者：
Ma, Hong [1 ]
Yi, Xin-Jian [1 ]
Jin, Jin-Yan [1 ]
Yang, Xin-Min [1 ]
Li, Tong-Ning [1 ]
机构：
[1] Lab. of Laser Technol., Huazhong Univ. of Sci. and Technol., Wuhan 430074, China
来源：
Zhongguo Jiguang/Chinese Journal of Lasers | 2002年 / 29卷 / 03期
关键词：
Oxygen - Photoluminescence - Quantum well lasers - Semiconductor lasers - Semiconductor quantum wells - X ray diffraction;
D O I：
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中图分类号：
学科分类号：
摘要：
AlGaInAs strain-compensated quantum wells have been grown by LP-MOVPE. By X-ray diffraction, photoluminescence and SIMS, the properties of the materials and the oxygen concentration in AlGaInAs materials are analyzed. A high quality (PL FWHM=26 meV: room temperature) AlGaInAs strain-compensated quantum well through optimized MOVPE process is obtained. By the wafers, the 1.3 μm uncooled AlGaInAs strain-compensated quantum well lasers have been fabricated. The results of the laser chips are: 1290 nmλ1330 nm, Ith (25°C)15 mA, Ith(85°C)25 mA and Δηex(25-85°C)1.0 dB.
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页码：193 / 196
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