Study on MOVPE growth of 1.3 μm uncooled AlGaInAs/InP strain-compensated quantum well lasers

被引：0
|
作者：
Ma, Hong [1 ]
Yi, Xin-Jian [1 ]
Jin, Jin-Yan [1 ]
Yang, Xin-Min [1 ]
Li, Tong-Ning [1 ]
机构：
[1] Lab. of Laser Technol., Huazhong Univ. of Sci. and Technol., Wuhan 430074, China
来源：
Zhongguo Jiguang/Chinese Journal of Lasers | 2002年 / 29卷 / 03期
关键词：
Indium phosphate - Laser chips - Strain compensated quantum wells;
D O I：
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摘要：
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页码：193 / 196
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