Study on MOVPE growth of 1.3 μm uncooled AlGaInAs/InP strain-compensated quantum well lasers

被引：0
|
作者：
Ma, Hong [1 ]
Yi, Xin-Jian [1 ]
Jin, Jin-Yan [1 ]
Yang, Xin-Min [1 ]
Li, Tong-Ning [1 ]
机构：
[1] Lab. of Laser Technol., Huazhong Univ. of Sci. and Technol., Wuhan 430074, China
来源：
Zhongguo Jiguang/Chinese Journal of Lasers | 2002年 / 29卷 / 03期
关键词：
Oxygen - Photoluminescence - Quantum well lasers - Semiconductor lasers - Semiconductor quantum wells - X ray diffraction;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
AlGaInAs strain-compensated quantum wells have been grown by LP-MOVPE. By X-ray diffraction, photoluminescence and SIMS, the properties of the materials and the oxygen concentration in AlGaInAs materials are analyzed. A high quality (PL FWHM=26 meV: room temperature) AlGaInAs strain-compensated quantum well through optimized MOVPE process is obtained. By the wafers, the 1.3 μm uncooled AlGaInAs strain-compensated quantum well lasers have been fabricated. The results of the laser chips are: 1290 nmλ1330 nm, Ith (25°C)15 mA, Ith(85°C)25 mA and Δηex(25-85°C)1.0 dB.
引用
收藏
页码：193 / 196
相关论文
共 50 条
  • [1] Strain-compensated 1.3-μm AlGaInAs quantum-well lasers with multiquantum barriers at the cladding layers
    Pan, JW
    Chen, MH
    Chyi, JI
    Shih, TT
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (01) : 9 - 11
  • [2] A Novel Investigation on Using Strain in Barriers of 1.3 μm AlGaInAs-InP Uncooled Multiple Quantum Well Lasers
    Vahid BahramiYekta
    Hassan Kaatuzian
    CommunicationsinTheoreticalPhysics, 2010, 54 (09) : 529 - 535
  • [3] A Novel Investigation on Using Strain in Barriers of 1.3 μm AlGaInAs-InP Uncooled Multiple Quantum Well Lasers
    Yekta, Vahid Bahrami
    Kaatuzian, Hassan
    COMMUNICATIONS IN THEORETICAL PHYSICS, 2010, 54 (03) : 529 - 535
  • [4] Growth of strain-compensated GaInNAs/GaAsP quantum wells for 1.3 μm lasers
    Li, W
    Turpeinen, J
    Melanen, P
    Savolainen, P
    Uusimaa, P
    Pessa, M
    JOURNAL OF CRYSTAL GROWTH, 2001, 230 (3-4) : 533 - 536
  • [5] Study of Strain-Compensated for 1310nm AlGaInAs/InP Multi-Quantum-Well Laser
    Jia, Huayu
    Yin, Jinhong
    Zhu, Tianxiong
    Rao, Lan
    2016 15TH INTERNATIONAL CONFERENCE ON OPTICAL COMMUNICATIONS AND NETWORKS (ICOCN), 2016,
  • [6] Design considerations to improve high temperature characteristics of 1.3 μm AlGaInAs-InP uncooled multiple quantum well lasers: Strain in barriers
    Yekta, Vahid Bahrami
    Kaatuzian, Hassan
    OPTIK, 2011, 122 (06): : 514 - 519
  • [7] ULTRAHIGH TEMPERATURE AND ULTRAHIGH-SPEED OPERATION OF 1.3-MU-M STRAIN-COMPENSATED ALGAINAS/INP UNCOOLED LASER-DIODES
    WANG, MC
    LIN, W
    SHI, TT
    TU, YK
    ELECTRONICS LETTERS, 1995, 31 (18) : 1584 - 1585
  • [8] MOVPE growth of AlGaInAs/InP strained quantum well
    2001, Wuhan University of Technology (23):
  • [9] Very low threshold current operation of 1.3-μm AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well laser diodes
    Wu, MY
    Yang, CD
    Lei, PH
    Wu, MC
    Ho, WJ
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (6B): : L643 - L645
  • [10] Very low threshold current density 1.3 mu m InAsP/InP/InGaP/InP/GaInAsP strain-compensated multiple quantum well lasers
    Kasukawa, A
    Yokouchi, N
    Yamanaka, N
    Iwai, N
    COMPOUND SEMICONDUCTORS 1995, 1996, 145 : 1019 - 1024
12345