共 50 条
- [1] Characterization of overgrown GaN layers on nano-columns grown by RF-molecular beam epitaxy JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (3A): : L192 - L194
- [4] Effects of atomic hydrogen on the growth of GaN by RF-molecular beam epitaxy Japanese Journal of Applied Physics, Part 2: Letters, 1999, 38 (3 A):
- [5] Effects of atomic hydrogen on the growth of GaN by RF-molecular beam epitaxy JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (3A): : L230 - L233
- [6] Effects of atomic hydrogen on the indium incorporation in InGaN grown by RF-molecular beam epitaxy JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (4B): : L343 - L346
- [7] Electrical characterization for ZnO layers grown on GaN templates by molecular-beam epitaxy JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (03): : 1281 - 1285
- [8] Band-GaP energy and physical properties of InN grown by RF-molecular beam epitaxy GAN AND RELATED ALLOYS - 2003, 2003, 798 : 189 - 200
- [9] Characterization of GaAs layers grown by molecular beam epitaxy SURFACES, VACUUM, AND THEIR APPLICATIONS, 1996, (378): : 245 - 248
- [10] High-quality GaN on AlN multiple intermediate layer with migration enhanced epitaxy by rf-molecular beam epitaxy JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (3AB): : L197 - L199