Growth of al-doped ZnO films by mid frequency DC magnetron sputtering

被引：0
|
作者：
Lin, Qinggeng [1 ,2 ]
Gao, Xiaoyong [1 ]
Liu, Yufen [1 ]
Lu, Jingxiao [1 ]
机构：
[1] The Key Lab of Materials Physics of Ministry of Education, Zhengzhou University, Zhengzhou 450052, China
[2] School of Physics and Engineering, Zhengzhou University, Zhengzhou 450052, China
来源：
Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology | 2008年 / 28卷 / 06期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：566 / 569
相关论文
共 50 条
  • [41] Vibrational properties and structure of undoped and Al-doped ZnO films deposited by RF magnetron sputtering
    Tzolov, M
    Tzenov, N
    Dimova-Malinovska, D
    Kalitzova, M
    Pizzuto, C
    Vitali, G
    Zollo, G
    Ivanov, I
    THIN SOLID FILMS, 2000, 379 (1-2) : 28 - 36
  • [42] Investigations on preferentially oriented Al-doped ZnO films developed using rf magnetron sputtering
    Nalin Prashant Poddar
    S. K. Mukherjee
    Journal of Materials Science: Materials in Electronics, 2019, 30 : 537 - 548
  • [43] Study on Al-doped ZnO Films Prepared by Magnetron Sputtering with Rapid Thermal Annealing Process
    Wang, Hua
    Xu, Jiwen
    Ren, Mingfang
    Yang, Ling
    MANUFACTURING SCIENCE AND ENGINEERING, PTS 1-5, 2010, 97-101 : 582 - 585
  • [44] The effect of substrate bias voltage on the properties of Al-doped ZnO films deposited by magnetron sputtering
    Ievtushenko, A. I.
    Karpyna, V. A.
    Kolomys, O. F.
    Mamykin, S. V.
    Lytvyn, P. M.
    Bykov, O. I.
    Korchovyi, A. A.
    Starik, S. P.
    Bilorusets, V. V.
    Popenko, V. I.
    Strelchuk, V. V.
    Baturin, V. A.
    Karpenko, O. Y.
    SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2024, 27 (04) : 418 - 426
  • [45] Spatial distribution of electrical properties for Al-doped ZnO films deposited by dc magnetron sputtering using various inert gases
    Sato, Yasushi
    Ishihara, Keita
    Oka, Nobuto
    Shigesato, Yuzo
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2010, 28 (04): : 895 - 900
  • [46] Crystal growth of Al-doped ZnO films under different sputtering conditions
    Goh, EG
    Gong, H
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2002, 16 (1-2): : 287 - 293
  • [47] Investigations on preferentially oriented Al-doped ZnO films developed using rf magnetron sputtering
    Poddar, Nalin Prashant
    Mukherjee, S. K.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 30 (01) : 537 - 548
  • [48] Room Temperature Growth of Al-Doped ZnO Thin Films by Reactive DC Sputtering Technique with Metallic Target
    Hasuike, Noriyuki
    Nishio, Koji
    Kisoda, Kenji
    Harima, Hiroshi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (01)
  • [49] RF magnetron sputtering of ZnO and Al-doped ZnO films from ceramic and nanopowder targets: a comparative study
    Y. Bouznit
    Y. Beggah
    K. Djessas
    Journal of Sol-Gel Science and Technology, 2012, 61 : 449 - 454
  • [50] RF magnetron sputtering of ZnO and Al-doped ZnO films from ceramic and nanopowder targets: a comparative study
    Bouznit, Y.
    Beggah, Y.
    Djessas, K.
    JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2012, 61 (02) : 449 - 454
12345