Long range implantation by MEVVA metal ion source

被引:0
|
作者
机构
来源
| 2001年 / Science Press卷 / 12期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Ion beam synthesis of SiC/Si heterostructures by MEVVA implantation
    Wong, SP
    Ho, LC
    Chen, DH
    Guo, WS
    Yan, H
    Kwok, RWM
    MATERIALS MODIFICATION AND SYNTHESIS BY ION BEAM PROCESSING, 1997, 438 : 277 - 282
  • [32] Properties of implanted PET by W ion using MEVVA implantation
    Wu, YG
    Zhang, TH
    Liu, AD
    Zhang, X
    Zhou, G
    VACUUM, 2003, 69 (04) : 461 - 466
  • [33] THE METAL VAPOR VACUUM-ARC (MEVVA) HIGH-CURRENT ION-SOURCE
    BROWN, IG
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (05) : 1723 - 1727
  • [34] Formation and characterization of Si5C3 type silicon carbide by carbon ion implantation with a MEVVA ion source
    Guo, L. B.
    Wang, Y. L.
    Song, F.
    He, F.
    Huang, Y.
    Yan, L. H.
    Wan, Y. Z.
    MATERIALS LETTERS, 2007, 61 (19-20) : 4083 - 4085
  • [35] Surfaces Modification of Ceramic Cutting Tools by MEVVA Ion Implantation
    Peng Zhijian
    Miao Hezhuo
    Wang Chengbiao
    Fu Zhiqiang
    Li Wenzhi
    RARE METAL MATERIALS AND ENGINEERING, 2008, 37 : 442 - 445
  • [36] Further development of the E-MEVVA ion source
    Batalin, VA
    Bugaev, AS
    Gushenets, VI
    Hershcovitch, A
    Johnson, BM
    Kolomiets, AA
    Kuibeda, RP
    Kulevoy, TV
    Oks, EM
    Pershin, VI
    Petrenko, SV
    Seleznev, DN
    Yushkov, GY
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2002, 73 (02): : 702 - 705
  • [37] Mevva ion source operated in purely gaseous mode
    Yushkov, GY
    MacGill, RA
    Brown, IG
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2004, 75 (05): : 1582 - 1584
  • [38] Technical design of the MEVVA ion source at GSI and results of a long uranium beam time period
    Heymach, F
    Galonska, M
    Hollinger, R
    Leible, KD
    Spädtke, P
    Stork, M
    Oks, E
    EMERGING APPLICATIONS OF VACUUM-ARC PRODUCED PLASMA, ION AND ELECTRON BEAMS, 2002, 88 : 59 - 65
  • [39] Electron field emission from SiC Si heterostrucutres synthesized by carbon implantation using a MEVVA ion source
    Chen, DH
    Wong, SP
    Cheung, WY
    Luo, EZ
    Wu, W
    Xu, JB
    Wilson, IH
    Kwok, RWM
    1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, 1998, : 803 - 806
  • [40] Long-range effect in metals in ion implantation
    Sharkeev, YP
    Kolupaeva, SN
    Girsova, NV
    Vikhor, NA
    Fortuna, SV
    Popov, LE
    Kozlov, EV
    RUSSIAN METALLURGY, 1998, (01): : 132 - 140