Morphological impact of insulator on inkjet-printed transistor

被引:12
|
作者
Moon S.J. [1 ,2 ]
Robin M. [1 ,3 ]
Wenlin K. [1 ]
Yann M. [3 ]
Bae B.S. [2 ]
Mohammed-Brahim T. [1 ]
Jacques E. [1 ]
Harnois M. [1 ]
机构
[1] Institut d'Électronique et des Télécommunications de Rennes, Université Rennes 1, UMR CNRS 6164, Campus de Beaulieu, Rennes Cedex
[2] Department of Display Engineering, Hoseo University, Asan, Chungnam
[3] Institut des Sciences Chimiques de Rennes, Université de Rennes 1, CNRS UMR 6226, Rennes
来源
Flexible and Printed Electronics | 2017年 / 2卷 / 03期
关键词
Access resistance; Drop on demand; Inkjet printing; Organic field effect transistors; Polymeric insulator;
D O I
10.1088/2058-8585/aa8760
中图分类号
学科分类号
摘要
This study reports on the impact of electrodes (source and drain) and the insulator cross-sectional profile on the electrical behavior of printed organic field effect transistors (OFETs). Varying processing techniques, from classical lithography to inkjet printing, show different cross-sectional profiles. Indeed, due to the coffee stain effect (usually considered a drawback), the inkjet-printed insulator shows a wave-shaped profile although the spin-coated one is perfectly smooth. However, OFET electrical behavior is not drastically impacted by the insulator cross-sectional profile. Moreover, this study clearly demonstrates that independently of the insulator cross-sectional profile, OFETs fabricated with printed electrodes show the worst electrical characteristics. Consequently, this work clearly demonstrates that a challenging issue for the fabrication of efficient fully-printed OFETs relies on drain and source optimization (for instance, morphology or material). © 2017 IOP Publishing Ltd.
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