High concentration doping of 6H-SiC by ion implantation: Flash versus furnace annealing

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作者：
Panknin, D. [1 ]
Wirth, H. [1 ]
Anwand, W. [1 ]
Brauer, G. [1 ]
Skorupa, W. [1 ]
机构：
[1] Inst. Ionenstrahlphysik M., Forschungszentrum Rossendorf, PO Box 510119, DE-01314 Dresden, Germany
来源：
Materials Science Forum | 2000年 / 338卷
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