Surface texturing for wafer-bonded vertical-type GaN/mirror/Si light-emitting diodes

被引:0
|
作者
Huang, Shao-Hua [1 ]
Horng, Ray-Hua [2 ]
Hsu, Shun-Cheng [1 ]
Chen, Tsung-Yu [3 ]
Wuu, Dong-Sing [1 ]
机构
[1] Department of Materials Engineering, National Chung Hsing University, Taichung 402, Taiwan
[2] Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan
[3] R and D Department, Advanced Epitaxy Technology Inc., Hsinchu Industrial Park, 303, Taiwan
关键词
Compendex;
D O I
暂无
中图分类号
学科分类号
摘要
Chemical bonds - Electron beams - Etching - Gallium nitride - Inductively coupled plasma - Light emitting diodes - Potassium compounds - Quantum efficiency - Semiconductor quantum wells - Silicon wafers - Surface roughness - Textures
引用
收藏
相关论文
共 50 条
  • [41] Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle
    Jeong, Junseok
    Wang, Qingxiao
    Cha, Janghwan
    Jin, Dae Kwon
    Shin, Dong Hoon
    Kwon, Sunah
    Kang, Bong Kyun
    Jang, Jun Hyuk
    Yang, Woo Seok
    Choi, Yong Seok
    Yoo, Jinkyoung
    Kim, Jong Kyu
    Lee, Chul-Ho
    Lee, Sangwook
    Zakhidov, Anvar A.
    Hong, Suklyun
    Kim, Moon J.
    Hong, Young Joon
    SCIENCE ADVANCES, 2020, 6 (23):
  • [42] Pointed cone shaped light-emitting diodes based on ZnO/GaN wafer bonding
    Murai, Akihiko
    Thompson, Daniel B.
    Hirasawa, Hirohiko
    Fellows, Natalie
    Brinkley, Stuart
    Won, Choi Joo
    Iza, Michael
    Mishra, Umesh K.
    Nakamura, Shuji
    Denbaars, Steven P.
    Japanese Journal of Applied Physics, 2008, 47 (5 PART 1): : 3522 - 3523
  • [43] Pointed Cone Shaped Light-Emitting Diodes Based on ZnO/GaN Wafer Bonding
    Murai, Akihiko
    Thompson, Daniel B.
    Hirasawa, Hirohiko
    Fellows, Natalie
    Brinkley, Stuart
    Won, Choi Joo
    Iza, Michael
    Mishra, Umesh K.
    Nakamura, Shuji
    DenBaars, Steven P.
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (05) : 3522 - 3523
  • [44] A study of transparent contact to vertical GaN-based light-emitting diodes
    Kim, DW
    Lee, HY
    Yeom, GY
    Sung, YJ
    JOURNAL OF APPLIED PHYSICS, 2005, 98 (05)
  • [45] A study of transparent contact to vertical GaN-based light-emitting diodes
    Kim, D.W.
    Lee, H.Y.
    Yeom, G.Y.
    Sung, Y.J.
    Journal of Applied Physics, 2005, 98 (05):
  • [46] A Stress Analysis of Transferred Thin-GaN Light-Emitting Diodes Fabricated by Au-Si Wafer Bonding
    Lin, Bo-Wen
    Wu, Nian-Jheng
    Wu, Yew Chung Sermon
    Hsu, S. C.
    JOURNAL OF DISPLAY TECHNOLOGY, 2013, 9 (05): : 371 - 376
  • [47] Vertical GaN-Based Light-Emitting Diodes Structure on Si(111) Substrate with Through-Holes
    Wei, Jingting
    Zhang, Baijun
    Wang, Gang
    Fan, Bingfeng
    Liu, Yang
    Rao, Wentao
    Huang, Zhicong
    Yang, Weimin
    Chen, Tufu
    Egawa, Takashi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (07) : 0721041 - 0721043
  • [48] High-efficiency vertical-structure GaN-based light-emitting diodes on Si substrates
    Wang, Wenliang
    Lin, Yunhao
    Li, Yuan
    Li, Xiaochan
    Huang, Liegen
    Zheng, Yulin
    Lin, Zhiting
    Wang, Haiyan
    Li, Guoqiang
    JOURNAL OF MATERIALS CHEMISTRY C, 2018, 6 (07) : 1642 - 1650
  • [49] Microscale hemisphere patterned backside mirror for GaN-based light-emitting diodes
    Huang, Huamao
    Hu, Haiying
    Wang, Hong
    Geng, Kuiwei
    APPLIED OPTICS, 2015, 54 (33) : 9791 - 9798
  • [50] Light extraction enhancement in GaN-based vertical light-emitting diodes with hemispherical bumps
    Wang, Yujin
    Zhu, Chuanrui
    Shen, Yan
    Yang, Haifang
    Liu, Zhe
    Gu, Changzhi
    Liu, Baoli
    Xu, Xiangang
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2014, 32 (05):