Surface texturing for wafer-bonded vertical-type GaN/mirror/Si light-emitting diodes

被引：0
|
作者：
Huang, Shao-Hua [1 ]
Horng, Ray-Hua [2 ]
Hsu, Shun-Cheng [1 ]
Chen, Tsung-Yu [3 ]
Wuu, Dong-Sing [1 ]
机构：
[1] Department of Materials Engineering, National Chung Hsing University, Taichung 402, Taiwan
[2] Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan
[3] R and D Department, Advanced Epitaxy Technology Inc., Hsinchu Industrial Park, 303, Taiwan
来源：
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 5 A卷 / 3028-3031期
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Chemical bonds - Electron beams - Etching - Gallium nitride - Inductively coupled plasma - Light emitting diodes - Potassium compounds - Quantum efficiency - Semiconductor quantum wells - Silicon wafers - Surface roughness - Textures
引用
收藏
相关论文
共 50 条
  • [31] Suppression of Ag Agglomeration on Pt-capped ITO/Ag Reflectors for Vertical-type Light-emitting Diodes
    Jeong, Tak
    Lee, Sang Hern
    La, Hyun Haeng
    Jeong, Seong Hun
    Jhin, Jung Geun
    Baek, Jong Hyeob
    Park, Si-Hyun
    Lee, June Key
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 55 (04) : 1615 - 1620
  • [32] High-Brightness GaN-Based Light-Emitting Diodes on Si Using Wafer Bonding Technology
    Lee, Seung-Jae
    Kim, Kang Ho
    Ju, Jin-Woo
    Jeong, Tak
    Lee, Cheul-Ro
    Baek, Jong Hyeob
    APPLIED PHYSICS EXPRESS, 2011, 4 (06)
  • [33] Effect of the surface texturing shapes fabricated using dry etching on the extraction efficiency of vertical light-emitting diodes
    Lee, H. C.
    Park, J. B.
    Bae, J. W.
    Thuy, Pham Thi Thu
    Yoo, M. C.
    Yeom, G. Y.
    SOLID-STATE ELECTRONICS, 2008, 52 (08) : 1193 - 1196
  • [34] Enhancement in external quantum efficiency of 365 nm vertical-type ultraviolet light-emitting diodes with embedded oxide structure
    Shen, Kun-Ching
    Yang, Min-Hao
    Lin, Wen-Yu
    Horng, Ray-Hua
    Wuu, Dong-Sing
    LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XVII, 2013, 8641
  • [35] GaN/ZnO Nanotube Heterostructure Light-Emitting Diodes Fabricated on Si
    Lee, Chul-Ho
    Hong, Young Joon
    Kim, Yong-Jin
    Yoo, Jinkyoung
    Baek, Hyeonjun
    Jeon, Seong-Ran
    Lee, Seung-Jae
    Yi, Gyu-Chul
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2011, 17 (04) : 966 - 970
  • [36] Self-textured oxide structure for improved performance of 365 nm ultraviolet vertical-type light-emitting diodes
    Shen, Kun-Ching
    Lin, Wen-Yu
    Lin, Han-Yu
    Chen, Ken-Yen
    Wuu, Dong-Sing
    OPTICS EXPRESS, 2014, 22 (15): : 17600 - 17606
  • [37] High-brightness AlGaInP light-emitting diodes using surface texturing
    Linder, N
    Kugler, S
    Stauss, P
    Streubel, KP
    Wirth, R
    Zull, H
    LIGHT-EMITTING DIODES: RESEARCH MANUFACTURING, AND APPLICATIONS V, 2001, 4278 : 19 - 25
  • [38] Wafer-bonded AlGaInAs 1.3 mu m vertical-cavity surface-emitting lasers
    Qian, Y
    Zhu, ZH
    Lo, YH
    Hou, HQ
    Hammons, BE
    Huffaker, DL
    Deppe, DG
    Lin, W
    Wang, MC
    Yu, YK
    VERTICAL-CAVITY SURFACE-EMITTING LASERS, 1997, 303 : 161 - 168
  • [39] Aluminum Nitride Ceramic Substrates-Bonded Vertical Light-Emitting Diodes
    Jeong, Tak
    Kim, Kang Ho
    Lee, Seung Jae
    Lee, Sang Hern
    Jeon, Seong Ran
    Lim, Sue Hyun
    Baek, Jong Hyeob
    Lee, June Key
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2009, 21 (13) : 890 - 892
  • [40] Full wafer scale nanoimprint lithography for GaN-based light-emitting diodes
    Byeon, Kyeong-Jae
    Hong, Eun-Ju
    Park, Hyoungwon
    Cho, Joong-Yeon
    Lee, Seong-Hwan
    Jhin, Junggeun
    Baek, Jong Hyeob
    Lee, Heon
    THIN SOLID FILMS, 2011, 519 (07) : 2241 - 2246
12345