Re-examination of impact of intrinsic dopant fluctuations on static RAM (SRAM) static noise margin

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Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan [1 ]
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| 1600年 / 2147-2151卷 / April 2005期
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Compendex;
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摘要：
Approximation theory - Computer simulation - Integrated circuit layout - MOS capacitors - MOSFET devices - Parameter estimation - Probability density function - Schematic diagrams - Spurious signal noise - Threshold voltage
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