Ge assisted SiC epitaxial growth by CVD on SiC substrate

被引：0
|
作者：
20141217488031
机构：
来源：
(1) Université Claude Bernard Lyon 1, CNRS, UMR 5615, Laboratoire des Multimatériaux et Interfaces, 43 Bd du 11 Nov. 1918, 69622 Villeurbanne, France; (2) LMGP, UMR CNRS 5628, Grenoble INP, Minatec, 3 parvis Louis Néel, 38016 Grenoble, France; (3) Laboratoire Charles Coulomb, UMR CNRS 5221 Université Montpellier, France | 1600年 / Cree Inc.; et al; Mitsubishi Electric Corporation; Research Institute for Applied Sciences; The Japan Society of Applied Physics; Tokyo Electron Limited卷 / Trans Tech Publications Ltd期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
103223
引用
收藏
页码：778 / 780
相关论文
共 50 条
  • [41] Substrate and epitaxial issues for SiC power devices
    Spencer, MG
    Palmour, J
    Carter, C
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (05) : 940 - 945
  • [42] Epitaxial growth of 3C-SiC on Si(111) and (001) by laser CVD
    Zhu, Peipei
    Yang, Meijun
    Xu, Qingfang
    Sun, Qingyun
    Tu, Rong
    Li, Jun
    Zhang, Song
    Li, Qizhong
    Zhang, Lianmeng
    Goto, Takashi
    Shi, Ji
    Li, Haiwen
    Ohmori, Hitoshi
    Kosinova, Marina
    Basu, Bikramjit
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2018, 101 (09) : 3850 - 3856
  • [43] Epitaxial gallium oxide on a SiC/Si substrate
    S. A. Kukushkin
    V. I. Nikolaev
    A. V. Osipov
    E. V. Osipova
    A. I. Pechnikov
    N. A. Feoktistov
    Physics of the Solid State, 2016, 58 : 1876 - 1881
  • [44] Raman spectroscopy of epitaxial graphene on a SiC substrate
    Ni, Z. H.
    Chen, W.
    Fan, X. F.
    Kuo, J. L.
    Yu, T.
    Wee, A. T. S.
    Shen, Z. X.
    PHYSICAL REVIEW B, 2008, 77 (11)
  • [45] High Stability of Epitaxial Graphene on a SiC Substrate
    Kujime, Takaya
    Taniguchi, Yoshiaki
    Akiyama, Daiu
    Kawamura, Yusuke
    Kanai, Yasushi
    Matsumoto, Kazuhiko
    Ohno, Yasuhide
    Nagase, Masao
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2020, 257 (02):
  • [46] Growth of multi-star CVD β-SiC and SiC/TiC composites
    Natl Cheng Kung Univ, Tainan, Taiwan
    Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan, 1996, 104 (1207): : 174 - 178
  • [47] Control of pendeo epitaxial growth of 3C-SiC on silicon substrate
    Okui, Y
    Jacob, C
    Ohshima, S
    Nishino, S
    SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 209 - 212
  • [48] Basal Plane Dislocation Mitigation in SiC Epitaxial Growth by Nondestructive Substrate Treatment
    Song, Haizheng
    Sudarshan, Tangali S.
    CRYSTAL GROWTH & DESIGN, 2012, 12 (04) : 1703 - 1707
  • [49] Liquid phase epitaxial growth of SiC
    Syväjärvi, M
    Yakimova, R
    Radamson, HH
    Son, NT
    Wahab, Q
    Ivanov, IG
    Janzén, E
    JOURNAL OF CRYSTAL GROWTH, 1999, 197 (1-2) : 147 - 154
  • [50] PROGRESS IN EPITAXIAL-GROWTH OF SIC
    MATSUNAMI, H
    PHYSICA B, 1993, 185 (1-4): : 65 - 74
12345