Ge assisted SiC epitaxial growth by CVD on SiC substrate

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20141217488031
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(1) Université Claude Bernard Lyon 1, CNRS, UMR 5615, Laboratoire des Multimatériaux et Interfaces, 43 Bd du 11 Nov. 1918, 69622 Villeurbanne, France; (2) LMGP, UMR CNRS 5628, Grenoble INP, Minatec, 3 parvis Louis Néel, 38016 Grenoble, France; (3) Laboratoire Charles Coulomb, UMR CNRS 5221 Université Montpellier, France | 1600年 / Cree Inc.; et al; Mitsubishi Electric Corporation; Research Institute for Applied Sciences; The Japan Society of Applied Physics; Tokyo Electron Limited卷 / Trans Tech Publications Ltd期
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