GaNAs as strain compensating layer for 1.55μm light emission from InAs quantum dots

被引：0
|
作者：
Ganapathy, Sasikala [1 ,2 ]
Zhang, Xi Qing [1 ]
Suemune, Ikuo [1 ,2 ]
Uesugi, Katsuhiro [1 ]
Kumano, Hidekazu [1 ]
Kim, B.J. [3 ]
Seong, Tae-Yeon [3 ]
机构：
[1] [1,Ganapathy, Sasikala
[2] Zhang, Xi Qing
[3] 1,Suemune, Ikuo
[4] Uesugi, Katsuhiro
[5] Kumano, Hidekazu
[6] Kim, B.J.
[7] Seong, Tae-Yeon
来源：
Ganapathy, S. (sasikala@hokudai.ac.jp) | 1600年 / Japan Society of Applied Physics卷 / 42期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
16
引用
收藏
页码：5598 / 5601
相关论文
共 50 条
  • [41] Photoluminescence characterization of InAs quantum dots on GaNAs buffer layer by metalorganic chemical vapor deposition
    Suzuki, Ryoichiro
    Miyamoto, Tomoyuki
    Matsuura, Tetsuya
    Koyama, Furnio
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (20-23): : L585 - L587
  • [42] Optical properties of multi-stacked InAs/GaNAs strain-compensated quantum dots
    Oshima, Ryuji
    Nakamura, Yuta
    Takata, Ayami
    Okada, Yoshitaka
    JOURNAL OF CRYSTAL GROWTH, 2008, 310 (7-9) : 2234 - 2238
  • [43] InAs quantum dots on GaAs substrates with InGaAs strain reducing layer for long wavelength emission
    Saravanan, S
    Vaccaro, PO
    Zanardi, JM
    Kubota, K
    Aida, T
    2ND INTERNATIONAL CONFERENCE ON SEMICONDUCTOR QUANTUM DOTS, 2003, : 1193 - 1196
  • [44] Emission at 1.55 μm from InAs/GaAS quantum dots grown by metal organic chemical vapor deposition via antimony incorporation
    Guimard, Denis
    Tsukamoto, Shiro
    Nishioka, Masao
    Arakawa, Yasuhiko
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 11, 2006, 3 (11): : 4023 - +
  • [45] Single-photon emission at 1.55 μm from MOVPE-grown InAs quantum dots on InGaAs/GaAs metamorphic buffers
    Paul, Matthias
    Olbrich, Fabian
    Hoeschele, Jonatan
    Schreier, Susanne
    Kettler, Jan
    Portalupi, Simone Luca
    Jetter, Michael
    Michler, Peter
    APPLIED PHYSICS LETTERS, 2017, 111 (03)
  • [46] 1.55 μm emission from InAs/GaAs quantum dots grown by metal organic chemical vapor deposition via antimony incorporation
    Guimard, Denis
    Tsukamoto, Shiro
    Nishioka, Masao
    Arakawa, Yasuhiko
    APPLIED PHYSICS LETTERS, 2006, 89 (08)
  • [47] Improved electroluminescence of InAs quantum dots with strain reducing layer
    Yeh, NT
    Nee, TE
    Chyi, JI
    Chia, CT
    Hsu, TM
    Huang, CC
    JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 1044 - 1048
  • [48] Pathway to achieving circular InAs quantum dots directly on (100) InP and to tuning their emission wavelengths toward 1.55 μm
    Leavitt, Richard P.
    Richardson, Christopher J. K.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2015, 33 (05):
  • [49] Structural and optical properties of InAs quantum dots with 1.55 μm emission grown on (100) InAlAs/InP by using MBE
    Koo, BH
    Makino, H
    Chang, JH
    Hanada, T
    Yao, T
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2001, 39 (03) : 466 - 468
  • [50] Emission at 1.6 μm from InAs Quantum Dots in Metamorphic InGaAs Matrix
    Zhan, Wenbo
    Ishida, Satomi
    Kwoen, Jinkwan
    Watanabe, Katsuyuki
    Iwamoto, Satoshi
    Arakawa, Yasuhiko
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2020, 257 (02):
12345