GaNAs as strain compensating layer for 1.55μm light emission from InAs quantum dots

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作者：
Ganapathy, Sasikala [1 ,2 ]
Zhang, Xi Qing [1 ]
Suemune, Ikuo [1 ,2 ]
Uesugi, Katsuhiro [1 ]
Kumano, Hidekazu [1 ]
Kim, B.J. [3 ]
Seong, Tae-Yeon [3 ]
机构：
[1] [1,Ganapathy, Sasikala
[2] Zhang, Xi Qing
[3] 1,Suemune, Ikuo
[4] Uesugi, Katsuhiro
[5] Kumano, Hidekazu
[6] Kim, B.J.
[7] Seong, Tae-Yeon
来源：
Ganapathy, S. (sasikala@hokudai.ac.jp) | 1600年 / Japan Society of Applied Physics卷 / 42期
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摘要：
16
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页码：5598 / 5601
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