Effect of the Si droplet size on the VLS growth mechanism of SiC homoepitaxial layers

被引：0
|
作者：
Ferro, G. [1 ]
Chaussende, D. [2 ]
Cauwet, F. [1 ]
Monteil, Y. [1 ]
机构：
[1] Laboratoire des Multimatériaux et Interfaces, UMR 5615, UCB Lyon 1, 43, Bd du 11 Novembre 1918, FR-69622 Villeurbanne Cedex, France
[2] NOVASIC, Arche Bât.4, Savoie Technolac, BP 267, FR-73375 Le Bourget du Lac Cedex, France
来源：
Materials Science Forum | 2002年 / 389-393卷 / 01期
关键词：
Homoepitaxial growth - Sublimation epitaxy - Vapour-Liquid-Solid (VLS);
D O I：
10.4028/www.scientific.net/msf.389-393.287
中图分类号：
学科分类号：
摘要：
引用
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页码：287 / 290
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