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- [7] Comparison of GaN and AlN nucleation layers for the oriented growth of GaN on diamond substratesDIAMOND AND RELATED MATERIALS, 2010, 19 (5-6) : 437 - 440van Dreumel, G. W. G.Bohnen, T.Buijnsters, J. G.van Enckevort, W. J. P.ter Meulen, J. J.Hageman, P. R.Vlieg, E.
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- [9] Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistorsAPPLIED PHYSICS LETTERS, 2019, 115 (22)Lu, JunChen, Jr-TaiDahlqvist, MartinKabouche, RiadMedjdoub, FaridRosen, JohannaKordina, OlofHultman, Lars
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