Suppression of leakage current of metal-insulator-semiconductor Ta 2O5 capacitors with Al2O3/SiON buffer layer

被引：0
|
作者：
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan [1 ]
机构：
来源：
Jpn. J. Appl. Phys. | / 10 PART 1卷
关键词：
539.1 Metals Corrosion - 701.1 Electricity: Basic Concepts and Phenomena - 714.2 Semiconductor Devices and Integrated Circuits - 722.1 Data Storage; Equipment and Techniques - 802.2 Chemical Reactions - 804 Chemical Products Generally - 804.2 Inorganic Compounds - 933.1 Crystalline Solids;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
22
引用
收藏
相关论文
共 50 条
  • [21] Low Interface Trapped Charge Density for Al2O3/β-Ga2O3 (001) Metal-Insulator-Semiconductor Capacitor
    Zhang, Qihao
    Shen, Yisong
    Liu, Jiangwei
    Tu, Chunming
    Zhai, Dongyuan
    He, Min
    Lu, Jiwu
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2022, 10 : 942 - 946
  • [22] Blistering of atomic layer deposition Al2O3 layers grown on silicon and its effect on metal-insulator-semiconductor structures
    Beldarrain, Oihane
    Duch, Marta
    Zabala, Miguel
    Marc Rafi, Joan
    Bargallo Gonzalez, Mireia
    Campabadal, Francesca
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2013, 31 (01):
  • [23] Low Interface Trapped Charge Density for Al2O3/β-Ga2O3(001) Metal-Insulator-Semiconductor Capacitor
    Zhang Q.
    Shen Y.
    Liu J.
    Tu C.
    Zhai D.
    He M.
    Lu J.
    IEEE Journal of the Electron Devices Society, 2022, 10 : 942 - 946
  • [24] Laminate Al2O3/Ta2O5 Metal/Insulator/Insulator/Metal (MIIM) Devices for High-Voltage Applications
    Jenkins, Melanie A.
    Austin, Dustin Z.
    Holden, Konner E. K.
    Allman, Derryl
    Conley, John F., Jr.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (12) : 5260 - 5265
  • [25] Leakage mechanisms and dielectric properties of Al2O3/TiN-based metal-insulator-metal capacitors
    Meng, S
    Basceri, C
    Busch, BW
    Derderian, G
    Sandhu, G
    APPLIED PHYSICS LETTERS, 2003, 83 (21) : 4429 - 4431
  • [26] Transport mechanisms of leakage current in Al2O3/InAlAs MOS capacitors
    Jin, Chengji
    Lu, Hongliang
    Zhang, Yimen
    Zhang, Yuming
    Guan, He
    Wu, Lifan
    Lu, Bin
    Liu, Chen
    SOLID-STATE ELECTRONICS, 2016, 123 : 106 - 110
  • [27] Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies
    Jackson, Christine M.
    Arehart, Aaron R.
    Cinkilic, Emre
    McSkimming, Brian
    Speck, James S.
    Ringel, Steven A.
    JOURNAL OF APPLIED PHYSICS, 2013, 113 (20)
  • [28] Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
    Zhu, Jie-Jie
    Ma, Xiao-Hua
    Chen, Wei-Wei
    Hou, Bin
    Xie, Yong
    Hao, Yue
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (05)
  • [29] Metal-insulator-metal capacitors using atomic-layer-deposited Al2O3/HfO2/Al2O3 sandwiched dielectrics for wireless communications
    Ding, Shi-Jin
    Huang, Yu-Jian
    Li, Yanbo
    Zhang, D. W.
    Zhu, C.
    Li, M. -F.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (06): : 2518 - 2522
  • [30] Properties of MIS capacitors using the atomic-layer-deposited ZnO semiconductor and Al2O3 insulator
    Song, Jaewon
    Oh, Him Chan
    Park, Tae Joo
    Hwang, Cheol Seong
    Park, Sang-Hee Ko
    Yoon, Sung Min
    Hwangb, Chi-Sun
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (11) : H858 - H863
12345