Room temperature aging behaviour of thermally imprinted Pt/SrBi2Ta2O9/Pt ferroelectric thin film capacitors

被引:0
|
作者
机构
来源
| 1600年 / American Institute of Physics Inc.卷 / 90期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Preparation of SrBi2Ta2O9 ferroelectric thin film by RF magnetron sputtering
    Suu, K
    Masuda, T
    Nishioka, Y
    Tani, N
    INTEGRATED FERROELECTRICS, 1998, 21 (1-4) : 407 - 418
  • [32] Texture control and interfacial structures of SrBi2Ta2O9 thin films on Pt
    Lee, JS
    Kim, HH
    Kwon, HJ
    Jeong, YW
    APPLIED PHYSICS LETTERS, 1998, 73 (02) : 166 - 168
  • [33] Transmission electron microscopy observations on the interfacial structures of the Pt/SrBi2Ta2O9/Pt thin-film capacitors prepared by metallo-organic decomposition
    Zhu, Xinhua
    Wu, Di
    Li, Aidong
    Liu, Zhiguo
    Ming, Naiben
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2008, 91 (03) : 979 - 985
  • [34] Study of Pt bottom electrodes using high-temperature sputtering for ferroelectric memories with SrBi2Ta2O9 (SBTO) film
    Nasu, T
    Kibe, M
    Uemoto, Y
    Fujii, E
    Otsuki, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (07): : 4144 - 4148
  • [35] Study of Pt bottom electrodes using high-temperature sputtering for ferroelectric memories with SrBi2Ta2O9 (SBTO) film
    Nasu, T.
    Kibe, M.
    Uemoto, Y.
    Fujii, E.
    Otsuki, T.
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1998, 37 (07): : 4144 - 4148
  • [36] MOCVD of Nb substituted SrBi2Ta2O9 for integrated ferroelectric capacitors
    Hendrix, BC
    Glassman, TE
    Roeder, JF
    FERROELECTRIC THIN FILMS VIII, 2000, 596 : 143 - 148
  • [37] Effects of integration processes on the ferroelectric performance of SrBi2Ta2O9 capacitors
    Zhang, ZG
    Zhu, J
    Xie, D
    Liu, ZH
    2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS, 2004, : 742 - 745
  • [38] New top and bottom electrodes for SrBi2Ta2O9 ferroelectric capacitors
    Katori, K
    Nagel, N
    Watanabe, K
    Tanaka, M
    Yamoto, H
    Yagi, H
    INTEGRATED FERROELECTRICS, 1997, 17 (1-4) : 443 - 450
  • [39] Electrical properties of SrBi2Ta2O9 ferroelectric thin films at low temperature
    Yang, PX
    Carroll, DL
    Ballato, J
    Schwartz, RW
    APPLIED PHYSICS LETTERS, 2002, 81 (24) : 4583 - 4585
  • [40] Reversible and irreversible contributions to the polarization in SrBi2Ta2O9 ferroelectric capacitors
    Lohse, O
    Bolten, D
    Grossmann, M
    Waser, R
    Hartner, W
    Schindler, G
    FERROELECTRIC THIN FILMS VI, 1998, 493 : 267 - 278