Study of Pt bottom electrodes using high-temperature sputtering for ferroelectric memories with SrBi2Ta2O9 (SBTO) film

被引：0
|
作者：
Nasu, T. [1 ]
Kibe, M. [1 ]
Uemoto, Y. [1 ]
Fujii, E. [1 ]
Otsuki, T. [1 ]
机构：
[1] Matsushita Electronics Corp, Osaka, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1998年 / 37卷 / 07期
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Experimental; (EXP);
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摘要：
Pt bottom electrodes for SrBi2Ta2O9 (SBTO) capacitors have been investigated for use in nonvolatile memories. A Pt thin film which is sputtered at a temperature of 300°C consists of enlarged columnar grains, while a film sputtered at room temperature consists of fibrous columnar grains. The formation mechanism of enlarged grains of the Pt film sputtered at 300°C is due to the fact that the film structure changes with substrate temperature based on the structure-zone model. The Pt bottom electrode which consists of the enlarged grains results in a decrease in the Ti diffusion path, leading to effective adhesion of Pt to a SiO2 film.
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页码：4144 / 4148
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