Modal gain and lasing states in InAs/GaAs self-organized quantum dot lasers

被引：0
|
作者：
Fry, P.W.
Harris, L.
Parnell, S.R.
Finley, J.J.
Ashmore, A.D.
Mowbray, D.J.
Skolnick, M.S.
Hopkinson, M.
Hill, G.
Clark, J.C.
机构：
[1] Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
[2] EPSRC Ctrl. Facil. III-V S., Dept. of Electron. and Elec. Eng., University of Sheffield, Sheffield S1 3JD, United Kingdom
来源：
| 1600年 / American Institute of Physics Inc.卷 / 87期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Self-organized growth of InAs/GaAs quantum boxes
    Moison, JM
    Leprince, L
    Barthe, F
    Houzay, F
    Lebouche, N
    Gerard, JM
    Marzin, JY
    APPLIED SURFACE SCIENCE, 1996, 92 : 526 - 531
  • [22] Methods to tune the electronic states of self-organized InAs/GaAs quantum dots
    Wang, H
    Niu, ZC
    Zhu, HJ
    Wang, ZM
    Jiang, DS
    Feng, SL
    PHYSICA B, 2000, 279 (1-3): : 217 - 219
  • [23] Geometrical Effects on Characteristic Temperature and Modal Gain of InAs/GaAs Quantum-Dot Lasers
    Wang, Rui
    Yoon, Soon Fatt
    Zhao, Han Xue
    Ngo, Chun Yong
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 23 (13) : 863 - 865
  • [24] Quantum Dot Lasers Fabricated by Self-organized Growth
    PENG Ying-cai 1
    2.Dept. of Phys.
    Semiconductor Photonics and Technology, 2000, (03) : 129 - 133
  • [25] Self-organized quantum dots and quantum dot lasers (invited)
    Ishikawa, H
    Shoji, H
    Nakata, Y
    Mukai, K
    Sugawara, M
    Egawa, M
    Otsuka, N
    Sugiyama, Y
    Futatsugi, T
    Yokoyama, N
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (02): : 794 - 800
  • [26] The strain distributions and carrier's confining potentials of self-organized InAs/GaAs quantum dot
    Liu, Yumin
    Yu, Zhongyuan
    Huang, Yongzhen
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2006, 20 (29): : 4899 - 4907
  • [27] Low threshold CW lasing of closely-stacked self-organized InAs/GaAs quantum dots
    Mukai, K
    Nakata, Y
    Shoji, H
    Sugawara, M
    Ohtsubo, K
    Futatsugi, T
    Sugiyama, Y
    Yokoyama, N
    Ishikawa, H
    1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, : 345 - 348
  • [28] Quantum size effect in self-organized InAs/GaAs quantum dots
    Heitz, R
    Stier, O
    Mukhametzhanov, I
    Madhukar, A
    Bimberg, D
    PHYSICAL REVIEW B, 2000, 62 (16) : 11017 - 11028
  • [29] Modal Gain and Photoluminescence Investigation of Two-State Lasing in GaAs-Based 1.3 μm InAs/InGaAs Quantum Dot Lasers
    Liu, Chongyang
    Wang, Hong
    Meng, Qianqian
    Gao, Bo
    Ang, Kian Siong
    APPLIED PHYSICS EXPRESS, 2013, 6 (10)
  • [30] Exciton dynamics in self-organized inAs/GaAs quantum dots
    Stt. Key Lab. Superlattices M., Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
    不详
    Wuli Xuebao, 4 (749-750):
12345