Investigation on the response dependence of gate step pulse in AlGaN/GaN HEMT

被引：0
|
作者：
Lu, Shenghui [1 ]
Du, Jiangfeng [1 ]
Jin, Chong [1 ]
Zhou, Wei [1 ]
Yang, Mohua [1 ]
机构：
[1] School of Microelectronics and Solid-State Electronics, University of Electronics Science and Technology of China, Chengdu 610054, China
来源：
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | 2007年 / 27卷 / 03期
关键词：
High electron mobility transistors;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：335 / 338
相关论文
共 50 条
  • [31] Gate leakage current suppression in AlGaN/GaN HEMT by RTP annealing
    Mahajan, Somna S.
    Tomar, Anushree
    Laishram, Robert
    Kapoor, Sonalee
    Mailk, Amit
    Naik, A. A.
    Vinayak, Seema
    Sehgal, B. K.
    PHYSICS OF SEMICONDUCTOR DEVICES, 2014, : 145 - 147
  • [32] Performance Analysis of Normally-on Dual Gate Algan/Gan Hemt
    Manisha Rao
    Ravi Ranjan
    Nitesh Kashyap
    Rakesh Kumar Sarin
    Transactions on Electrical and Electronic Materials, 2021, 22 : 691 - 699
  • [33] Gate leakage mechanisms of the AlGaN/GaN HEMT with fluorinated graphene passivation
    Ding, Xiaoyu
    Song, Liang
    Yu, Guohao
    Cai, Yong
    Sun, Yuhua
    Zhang, Bingliang
    Du, Zhongkai
    Zeng, Zhongming
    Zhang, Xinping
    Zhang, Baoshun
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 162
  • [34] Polarization Properties in AlGaN/GaN HEMT-Array with a Shifted Gate
    Xing, Runxian
    Zhang, Ping
    Guo, Hongyang
    Yu, Guohao
    Zhou, Jiaan
    Yang, An
    Dai, Shige
    Zeng, Zhongming
    Zhang, Xingping
    Zhang, Baoshun
    PLASMONICS, 2024, 19 (05) : 2545 - 2552
  • [35] Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation
    Qu, Yongfeng
    Deng, Ningkang
    Yuan, Yuan
    Hu, Wenbo
    Liu, Hongxia
    Wu, Shengli
    Wang, Hongxing
    MATERIALS, 2022, 15 (11)
  • [36] Investigation on trap by the gate fringe capacitance in GaN HEMT
    Wang Xin-Hua
    Pang Lei
    Chen Xiao-Juan
    Yuan Ting-Ting
    Luo Wei-Jun
    Zheng Ying-Kui
    Wei Ke
    Liu Xin-Yu
    ACTA PHYSICA SINICA, 2011, 60 (09)
  • [37] Survivability of AlGaN/GaN HEMT
    Chen, Yaochung
    Coffie, Rob
    Luo, Wen-Ben
    Wojtowicz, Michael
    Smorchkova, Ioulia
    Heying, Benjamin
    Kim, Young-Min
    Aust, Michael V.
    Oki, Aaron
    2007 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-6, 2007, : 307 - 310
  • [38] The characteristics of implanted T-gate GaN/AlGaN/GaN-HEMT with short chanel
    Ohta, M.
    Tajima, T.
    Nomoto, K.
    Satoh, M.
    Nakamura, T.
    Kasai, T.
    REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, 2009, (27): : 97 - 100
  • [39] Impact of ZnO gate interfacial layer on piezoelectric response of AlGaN/GaN C-HEMT based ring gate capacitor
    Lalinsky, T.
    Vanko, G.
    Vallo, M.
    Drzik, M.
    Bruncko, J.
    Jakovenko, J.
    Kutis, V.
    Ryger, I.
    Hascik, S.
    Husak, M.
    SENSORS AND ACTUATORS A-PHYSICAL, 2011, 172 (02) : 386 - 391
  • [40] Analytical Demonstration of Gate Leakage Current in AlGaN/GaN/InGaN/GaN DH-HEMT
    Khan, Asif Abdullah
    Fahim-Al-Fattah, Md.
    Amin, Md. Ashiqul
    Mohammad, Shimanto
    Zia-Ul Hasan, Chowdhury
    2017 2ND IEEE INTERNATIONAL CONFERENCE ON RECENT TRENDS IN ELECTRONICS, INFORMATION & COMMUNICATION TECHNOLOGY (RTEICT), 2017, : 392 - 395
12345