Investigation on the response dependence of gate step pulse in AlGaN/GaN HEMT

被引：0
|
作者：
Lu, Shenghui [1 ]
Du, Jiangfeng [1 ]
Jin, Chong [1 ]
Zhou, Wei [1 ]
Yang, Mohua [1 ]
机构：
[1] School of Microelectronics and Solid-State Electronics, University of Electronics Science and Technology of China, Chengdu 610054, China
来源：
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | 2007年 / 27卷 / 03期
关键词：
High electron mobility transistors;
D O I：
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学科分类号：
摘要：
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页码：335 / 338
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