Ideal PN photodiode using doping controlled WSe2-MoSe2lateral heterostructure

被引：0
|
作者：
Kim, Ji Eun [1 ]
Kang, Won Tae [1 ,2 ]
Tu Vu, Van [1 ]
Kim, Young Rae [1 ,2 ]
Shin, Yong Seon [1 ]
Lee, Ilmin [1 ]
Won, Ui Yeon [1 ]
Lee, Boo Heung [1 ]
Kim, Kunnyun [3 ]
Phan, Thanh Luan [1 ]
Lee, Young Hee [2 ,4 ]
Yu, Woo Jong [1 ]
机构：
[1] Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon,Kyunggi-do 16419, Korea, Republic of
[2] Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon,Kyunggi-do 16419, Korea, Republic of
[3] Korea Electronics Technology Institute, Seongnam,13509, Korea, Republic of
[4] Department of Energy Science, Sungkyunkwan University, Suwon,Kyunggi-do 16419, Korea, Republic of
来源：
Journal of Materials Chemistry C | 2021年 / 9卷 / 10期
基金：
新加坡国家研究基金会;
关键词：
Built-in potential - Contact interface - Controlled transitions - Ideality factors - Intrinsic property - Sequential growth - Specific detectivity - Two Dimensional (2 D);
D O I：
暂无
中图分类号：
学科分类号：
摘要：
46
引用
收藏
页码：3504 / 3512
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